炭阳极电解消耗与炭阳极性能相关性分析

炭阳极消耗包括电解消耗、额外消耗（过剩消耗）及残极。炭阳极的消耗与电解槽的设计参数、电解过程的实际操作及炭阳极质量性能相关。其中，炭阳极质量性能对整个电解消耗起主要影响作用，特别是额外消耗。炭阳极的空气渗透性、CO2反应性、空气反应性及杂质元素等性能指标对炭阳极消耗影响较大，有效的控制这些指标是降低炭阳极消耗的有效措施。     

Effect of Water Content on the Electrical Conductivity of Sodium Trisilicate Glasses

The effect of variations in water content on the direct-current electrical conductivity of Na₂O · 3SiO₂ glass was measured. Increasing the water content of this glass from 10 to 500 wt ppm of H₂O results in an increase in the resistivity of a factor of 2 to 3. The increase in resistivity is accompanied by an increase in the activation energy for conduction. Increasing resistivity with increasing water content is attributed to decreasing molar volume. Under identical annealing conditions, "wetter" glasses relax to a smaller molar volume (greater density) because of the presence of a larger number of "terminal" hydroxyl species that allow structural relaxation to continue to lower temperatures.     

浅结欧姆接触研究

本文研究Al(Al-Si)/n~+(p~+)多晶硅/n~+(p~+)Si结构和Al-Si/n~+(p~+)Si结构的比接触电阻和反向漏电。结果表明,浅结时,Al/n~+(p~+)多晶硅/n~+(p~+)Si结构是良好的接触结构     

Coaxial Lines Containing Ceramic High-Tc Superconducting-Center Conductors

A superconducting line should be essentially lossless and dispersionless and have a purely resistive impedance up to at least 10 GHz. In fact we expect that a long (>1 km) line could carry nanosecond rise time pulses with zero distortion and low loss (<1 dB/km). We have measured the losses in some short sections of coaxial line containing ceramic high-T_c superconducting-center conductors over the frequency range from 5 to 50 MHz. There is only a slight improvement over a completely copper coaxial line.     

Effect of Excess PbO on the Densification of PLZT Ceramics

The densification behavior and electrical properties of PLZT ceramics as a function of excess PbO in the starting powder have been investigated. The hot-pressed PLZT ceramics, prepared from powders containing 0% to 4% excess PbO, were transparent, and their electrical properties were similar in general. PLZT with PbO deficiency up to 1.4 mol% from stoichiometry can be regarded as a single phase-PLZT.     

Ionic Resistivity in Fused Silica: I, Conduction-History Effects

The steady-state dc ionic resistivity measurements on GE 124 commercial fused silica glass were carried cut in nonblocking mode between 300° and 650°C using fused Li⁺, Na⁺, and K⁺ nitrate salts as electrodes. The alkali ions were electrolyzed through a sample disk in a U-tube-type dc conductivity cell until steady state was achieved. Sequential conduction experiments at varying temperatures using various ions in a given sample showed that the resistivity of an ion could vary by as much as 1 order of magnitude depending upon the conduction history of the specimen, i.e., which ions had been electrolyzed through the specimen during prior experiments.     

医院医技楼低压配电系统的谐波状况初探

通过对医院医技楼配电系统的谐波测试及数据分析,得到了医技楼内大型医疗用电设备和照明干线的电压、电流特征谐波频谱;了解现有医院大型医疗用电设备和照明干线电压、电流谐波畸变率的大致范围;得出医技楼配电系统的总谐波畸变率分布范围,并通过数学方法拟合出工程中实用的K系数估算方程,计算出变压器降容系数D的分布范围,从而为医院医技楼及谐波情况相似的建筑,提供低压配电系统设计中谐波治理的有效计算方法.     

Directed Growth and Electrical‐ Transport Properties of Carbon Nanotube Architectures on Indium Tin Oxide Films on Silicon‐Based Substrates

Growing aligned carbon nanotubes (CNTs) on electrically conducting and/or optically transparent materials is potentially useful for accessing CNT properties through electrical and optical stimuli. Here, we report a new approach to growing aligned bundles of multiwalled CNTs on a porous back contact of optically transparent and electrically conducting indium tin oxide (ITO) films on silicon and silica substrates without the use of a predeposited catalyst. CNTs grow from a xylene/ferrocene mixture, which traverses through the pores in the thin ITO film, and decomposes on an interfacial silica layer formed via the reaction between ITO and the Si substrate. The CNTs inherit the topography of the silica substrate, enabling back‐contact formation for CNTs grown in any predetermined orientation. These features can be harnessed to form CNT contacts with other substrate materials which, upon reduction by Si, results in a conducting interfacial layer. The ITO‐contacted CNTs exhibit thermally activated ohmic behavior across a 100 ± 10 meV barrier at electric fields below ～ 100 V cm^–1 due to carrier transport through the outermost shells of the CNTs. At higher electric fields, we observe superlinear behavior due to carrier tunneling and transport through the inner graphene shells. Our findings open up new possibilities for integrating CNTs with Si‐based device technologies.     

A Novel Multi-Probe Resistivity Approach to Inspect Green-State Metal Powder Compacts

This paper describes a new instrumentation approach to the nondestructive testing of green-state powdered metallurgy components. These samples are likely to generate surface-breaking and subsurface defects prior to sintering. Exploiting the principles of electric resistivity or potential drop measurements in solids, a system is configured which is capable of recording surface voltage distributions due to impressed current inputs. At the heart of this novel testing procedure is a multiple-pin sensor which allows for flexible measurement conditions in order to cover wide surface areas. Practical tests with production samples compare well with both analytical and numerical modeling techniques in predicting surface voltage distributions. Furthermore, initial studies of surface-breaking flaws exhibit excellent defect detectability.     

Pressure dependence of electrical resistivities of some charge transfer complexes

The electrical resistivities of organic charge transfer complexes namely dithionaphthalene-iodine (1:1), anthracene-trinitrobenzene (1:1), pyrene-2I₂ and benzidine-tcnq (dichloromethane) have been studied upto 2–8 GPa pressure. An increase in the electrical resistivities shows that the conduction is due to a hopping mechanism involving localized levels near the band edges or is trap-limited. Pressure can increase both the density of defects and intermolecular orbital overlap as opposite effects.